BL24CS32.pdf• Compatible with all I²C bidirectional data transfer protocol
• Memory array:
32 Kbits (4Kbytes) of EEPROM
Page size: 32 bytes
Additional Write lockable page
• Single supply voltage and high speed:
1.7V-5.5V
1MHz Random and sequential Read modes
• Write:
Byte Write within 3 ms
Page Write within 3 ms
Partial Page Writes Allowed
• Write Protect Pin for Hardware Data Protection
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• High-reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
• Enhanced ESD/Latch-up protection
HBM 8000V
• 8-lead PDIP/SOP/TSSOP/UDFN and WLCSP4 packages
• Voltage operating range: 4.5V to 5.5V
Peak write current 3 mA at 5.5V
Maximum read current 150 µA at 5.5V
Standby current 1 µA typical
• Industry standard two-wire bus protocol, I2C compatible
Including 100 kHz and 400 kHz modes
• Self-timed write cycle (including auto-erase)
• Power on/off data protection circuitry
• Endurance:
10,000,000 Erase/Write cycles guaranteed for High Endurance Block
1,000,000 E/W cycles guaranteed for Standard Endurance Block
• 8 byte page, or byte modes available
• 1 page x 8 line input cache (64 bytes) for fast write loads
• Schmitt trigger, filtered inputs for noise suppres-sion
• Output slope control to eliminate ground bounce
• 2 ms typical write cycle time, byte or page
• Up to 8 chips may be connected to the same bus
for up to 256K bits total memory
• Electrostatic discharge protection > 4000V
• Data retention > 200 years
• 8-pin PDIP/SOIC packages
