N-Channel Enhancement Mode MOSFET
DMN3051L-7
DMN3051L-7.pdf
DMN3051L-7.pdf
No.11100
FEATURES
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
DESCRIPTION
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
APPLICATION CIRCUIT
PIN CONFIGUTION
