BL24C08A.pdf•Compatible with all I2C bidirectional
data transfer protocol
• Memory array:
2K bits (256X 8) / 4K bits (512 X 8) / 8K
bits (1024 X 8) / 16K bits (2048 X 8) of EEPROM
Page size: 16 bytes
• Single supply voltage and high speed:
1 MHz Random and sequential Read modes
• Write:
Byte Write within 3 ms
Page Write within 3 ms
Partial Page Writes Allowed
• Write Protect Pin for Hardware Data Protection
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• High-reliability
Endurance: 1 Million Write Cycles
Data Retention: 100 Years
Enhanced ESD/Latch-up protection
HBM 8000V
• TSOT23-5、8-lead PDIP/SOP/TSSOP and UDFN packages
• Single supply with operation from 4.5-5.5V
• Low power CMOS technology
1 mA active current typical
10 µA standby current typical at 5.5V
• Organized as 4 or 8 blocks of 256
bytes (4 x 256 x 8) or (8 x 256 x 8)
• 2-wire serial interface bus, I2C compatible
• Schmitt trigger, filtered inputs for noise suppres-sion
• Output slope control to eliminate ground bounce
•100 kHz compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 16 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• ESD protection > 4,000V
• 1,000,000 ERASE/WRITE cycles guaranteed
• Data retention > 200 years
• 8-pin DIP, 8-lead or 14-lead SOIC packages
• Available for extended temperature range
