Silicon Germanium Low Noise Amplifier for LTE,SGM13005L2 Replace BGA7L1BN6.
SGM13005L2 SGM13005L2.pdf
FEATURES

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BGA7L1BN6 BGA7L1BN6.pdf

No.11456

FEATURES

• Insertion power gain: 13.6 dB

• Low noise figure: 0.75 dB

• Low current consumption: 4.9 mA

• Insertion Loss in bypass mode: -2.2 dB

• Operating frequencies: 716 - 960 MHz

• Two-state control: Bypass- and High gain-Mode

• Supply voltage: 1.5 V to 3.6 V

• Digital on/off switch (1V logic high level)

• Ultra small TSNP-6-2 leadless package 

  (footprint: 0.7 x 1.1 mm2)

• B7HF Silicon Germanium technology

• RF output internally matched to 50 Ω

• Only 1 external SMD component necessary

• Pb-free (RoHS compliant) package

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