Silicon Germanium Low Noise Amplifier for LTE,SGM13006H1 Replace BGA7H1N6.
CROSS
FEATURES
• Insertion power gain: 12.5 dB
• Low noise figure: 0.60 dB
• Low current consumption: 4.7 mA
• Operating frequencies: 2300 - 2690 MHz
• Supply voltage: 1.5 V to 3.3 V
• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package
(footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
PIN CONFIGUTION
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