SGM48521Q.pdf• AEC-Q100 Qualified for Automotive Applications
Device Temperature Grade 1
TA = -40℃ to +125℃
• 5V Supply Voltage
• 7A Peak Source and 6A Peak Sink Currents
• Ultra-Fast, Low-side Gate Driver for GaN and Si
FETs
• Minimum Input Pulse Width: 1ns
• Up to 60MHz Operation
• Propagation Delay: 2.2ns (TYP), 3.5ns (MAX)
• Rise Time:
WLCSP-0.88×1.28-6B: 500ps (TYP)
TDFN-2×2-6DL: 600ps (TYP)
• Fall Time:
WLCSP-0.88×1.28-6B: 460ps (TYP)
TDFN-2×2-6DL: 590ps (TYP)
• Protection Features:
Under-Voltage Lockout (UVLO)
Over-Temperature Protection (OTP)
• Available in Green WLCSP-0.88×1.28-6B and
TDFN-2×2-6DL Packages
• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
• 1 ns Minimum Input Pulse Width
• Up to 60 MHz Operation
• 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
• 400 ps Typical Rise and Fall Time
• 7-A Peak Source and 5-A Peak Sink Currents
• 5-V Supply Voltage
• UVLO and Overtemperature Protection
• 0.8 mm × 1.2 mm WCSP Package
