N-Channel Enhanced MOSFET.
DMG3420U-7 DMG3420U-7.pdf

No.13527

FEATURES
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage

DESCRIPTION

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Mechanical Data

• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
  UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish  Matte Tin Annealed over Copper
  Leadframe. Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below

• Weight: 0.008 grams (Approximate)
APPLICATION CIRCUIT
PIN CONFIGUTION
Site Map