5V, 7A/6A Low-Side GaN and MOSFET Driver with 1ns Pulse Width.
SGM48521Q
SGM48521Q.pdf
SGM48521Q.pdf
No.14087
FEATURES
• AEC-Q100 Qualified for Automotive Applications
Device Temperature Grade 1
TA = -40℃ to +125℃
• 5V Supply Voltage
• 7A Peak Source and 6A Peak Sink Currents
• Ultra-Fast, Low-side Gate Driver for GaN and Si FETs
• Minimum Input Pulse Width: 1ns
• Up to 60MHz Operation
• Propagation Delay: 2.2ns (TYP), 3.5ns (MAX)
• Rise Time:
WLCSP-0.88×1.28-6B: 500ps (TYP)
TDFN-2×2-6DL: 600ps (TYP)
• Fall Time:
WLCSP-0.88×1.28-6B: 460ps (TYP)
TDFN-2×2-6DL: 590ps (TYP)
• Protection Features:
Under-Voltage Lockout (UVLO)
Over-Temperature Protection (OTP)
• Available in Green WLCSP-0.88×1.28-6B and
TDFN-2×2-6DL Packages
DESCRIPTION
The high-speed, single-channel low-side driver SGM48521Q is designed to drive GaN FETs and logic level MOSFETs. Application areas include LiDAR, time of flight, facial recognition, and power converters using low-side drivers. The SGM48521Q provides 7A source and 6A sink output current capability. Split output configuration allows individual turn-on and turn-off time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the 2.2ns propagation delay with minimized tolerances and variations allows efficient operation at high frequencies.
The driver has internal under-voltage lockout and over-temperature protection against overload and fault events.
This device is AEC-Q100 qualified (Automotive Electronics Council (AEC) standard Q100 Grade 1) and it is suitable for automotive applications.
The SGM48521Q is available in Green WLCSP-0.88× 1.28-6B and TDFN-2×2-6DL packages.
APPLICATION CIRCUIT
PIN CONFIGUTION
