Dual N-Channel Enhancement Mode Field Effect Transistor
P5506HVG
P5506HVG.pdf
P5506HVG.pdf
No.10582
FEATURES
• V(BR)DSS: 60V
• RDS(ON): 55mΩ
• ID: 4.5A
DESCRIPTION
• Dual N-Channel Enhancement Mode Field Effect Transistor
APPLICATION CIRCUIT
PIN CONFIGUTION
